Orientation dependent ferroelectric properties in samarium doped bismuth titanate thin films grown by the pulsed-laser-ablation method

Authors

Z. Cheng, University of WollongongFollow
C. V. Kannan, National Institute for Materials Science, Japan
Kiyoshi Ozawa, National Institute for Materials Science, JapanFollow
H. Kimura, National Institute for Materials Science, Japan
Xiaolin Wang, University of WollongongFollow

RIS ID

17947

Publication Details

This article was originally published as: Cheng, Z, Kannan, CV, Ozawa, K, Kimura, H & Wang, X, Orientation dependent ferroelectric properties in samarium doped bismuth titanate thin films grown by the pulsed-laser-ablation method, Applied Physics Letters, 2006, 89(3), 032901-032903.Original journal available here.

Abstract

Samarium doped bismuth titanate thin films with the composition of Bi3.25Sm0.75Ti3O12 and with strong preferred orientations along the c axis and the (117) direction were fabricated on Pt/TiO2/SiO2/Si substrate by pulsed laser ablation. Measurements on Pt/BSmT/Pt capacitors showed that the c-axis oriented film had a small remanent polarization (2Pr) of 5 µC/cm2, while the highly (117) oriented film showed a 2Pr value of 54 µC/cm2 at an electrical field of 268 kV/cm and a coercive field Ec of 89 kV/cm. This is different from the sol-gel derived c-axis oriented Bi3.15Sm0.85Ti3O12 film showing a 2Pr value of 49 µC/cm2.