Publication Details

This paper was originally published as: Smith, ML, Mendis, R, Vickers, REM and Lewis, RA, Terahertz Emission from (100) p-InA, Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, (IRMMW-THz 2005), 19-23 September 2005, 1, 253-254. Copyright IEEE 2005.


Terahertz emission from (100) p-type InAs illuminated by ultrafast near-infrared pulses is investigated. A two-fold rotational symmetry was observed when rotated about the surface normal. A quadratic relationship was found for the emission dependence on optical pump power. These suggest the presence of photo-carrier transport and optical rectification mechanisms. The InAs emission was found to exceed that of a blackbody radiator for frequencies below 1 THz for nominal input power levels. The generated power was found to be roughly two orders of magnitude greater than a 1mm ZnTe emitter.

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