Title

Fast Switching and Double Resonance of Nonlinear Transistors in Terahertz Regime

RIS ID

131857

Publication Details

Ang, Y. S., Ang, L. K., Zhang, C. & Ma, Z. (2018). Fast Switching and Double Resonance of Nonlinear Transistors in Terahertz Regime. 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) (p. 686). United States: IEEE.

Abstract

We show that pure crossed Andreev reflection can be generated in an N/S/N device exclusively without the parasitic local Andreev reflection and elastic co tunnelling over a wide range of bias and Fermi levels. The pure non-local conductance exhibits rapid on/off switching and terahertz oscillation when the Fermi levels in the normal and the superconducting leads are varied. The transport characteristics exhibit double resonance ransport in terahertz regime.

Please refer to publisher version or contact your library.

Share

COinS
 

Link to publisher version (DOI)

http://dx.doi.org/10.1109/IRMMW-THz.2018.8510253