Title

The Bias Voltage and Photon Frequency Effects on the Negative Optical Conductance of a Gapped Single Layer Graphene p-n Junction (GGPNJ) in THz to Infrared Regime

RIS ID

131854

Publication Details

Sultan Al-Tikrity, S. F. (2018). The Bias Voltage and Photon Frequency Effects on the Negative Optical Conductance of a Gapped Single Layer Graphene p-n Junction (GGPNJ) in THz to Infrared Regime. 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) (pp. 698-699). United States: IEEE.

Abstract

In this paper we study the real part of total optical conductance of a gapped single layer graphene p-n junction (GGPNJ) in terahertz to infrared regime and The bias voltage and photon frequency effects on the negative optical conductance of (GGPNJ) in THz to infrared regime. It is shown that negative connectivity of (GGPNJ) can be affected by THz frequency and the bias voltage and that can be important to application of graphene in coherent terahertz radiation sources and optoelectronics devices.

Please refer to publisher version or contact your library.

Share

COinS
 

Link to publisher version (DOI)

http://dx.doi.org/10.1109/IRMMW-THz.2018.8510282