The effect of bias voltage on the optical conductance of a single layer graphene p-n junction in THz regime

Authors

Shareef Al Tikrity, University of WollongongFollow

RIS ID

88021

Publication Details

Al-Tikrity, S. F. Sultan. (2013). The effect of bias voltage on the optical conductance of a single layer graphene p-n junction in THz regime. International Conference on Infrared, Millimeter, and Terahertz Waves (pp. 1-2). IEEE.

Abstract

We have carried out a theoretical and computational study of the nonlinear optical conductance in terahertz to infrared regime of a single layer graphene p-n junction (GPNJ) with intra and inter band transition under moderate electric field. It is shown that the negative connectivity of single layer graphene can be enhanced and affected by the bias voltage. The result can be important to the application of graphene in coherent terahertz radiation sources and optoelectronics devices.