Transport Study in Magnetic Doped Topological Insulators

The topological insulator (TI) is a new type of material discovered early in the 21st century, which has had profound impacts in the fields of condensed matter physics and material science, with a variety of technological applications expected to emerge in the coming years. The TI is a bulk insulator with robust conducting boundary states, which are protected by the bulk symmetry. The potential applications, for example, include low-dissipation electronics, quantum computing and quantum information. Three-dimensional topological insulators (3D TIs) are an important family in TIs, offering a huge degree of freedom to manipulate the electronic properties via elemental substitution, dimensional tailoring, and electrostatic gating. This thesis focuses on the magnetic, magnetotransport and band structures of magnetic ion-doped 3D TIs.