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Robust ferromagnetism of single crystalline CoxZn1−xO (0.3 ≤ x ≤ 0.45) epitaxial films with high Co concentration

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posted on 2024-11-15, 15:08 authored by Qiang Cao, Dapeng Zhu, Maxiang Fu, Li Cai, Ping Yang, Shuang Li, Yinlian Zhu, Xiuliang Ma, Guo-Lei Liu, Yan-Xue Chen, Shi-Shen Yan, Liang-Mo Mei, Xiaolin WangXiaolin Wang
In contrast to conventional dilute magnetic semiconductors with concentrations of magnetic ions of just a few percent, here, we report the fabrication of epitaxial Cox Zn 1− xO single crystalline films with Co concentrations from x = 0.3 up to 0.45 by radio-frequency oxygen-plasma-assisted molecular beam epitaxy. The films retain their single crystalline wurtzite structure without any other crystallographic phase from precipitates, based on reflection high energy electron diffraction, X-ray diffraction, transmission electron microscopy, and Raman scattering. The results of X-ray diffraction, optical transmission spectroscopy, and in-situ X-ray photoelectron spectroscopy confirm the incorporation of Co2+ cations into the wurtzite lattice. The films exhibit robust ferromagnetism and the magneto-optical Kerr effect at room temperature. The saturation magnetization reaches 265 emu/cm3 at x = 0.45, which corresponds to the average magnetic moment of 1.5 μB per Co atom.

History

Citation

Cao, Q., Zhu, D., Fu, M., Cai, L., Yang, P., Li, S., Zhu, Y., Ma, X., Liu, G., Chen, Y., Yan, S., Mei, L. & Wang, X. (2016). Robust ferromagnetism of single crystalline CoxZn1−xO (0.3 ≤ x ≤ 0.45) epitaxial films with high Co concentration. Applied Physics Letters, 109 (5), 052404-1-052404-5.

Journal title

Applied Physics Letters

Volume

109

Issue

5

Language

English

RIS ID

109131

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