In contrast to conventional dilute magnetic semiconductors with concentrations of magnetic ions of just a few percent, here, we report the fabrication of epitaxial Cox Zn 1− xO single crystalline films with Co concentrations from x = 0.3 up to 0.45 by radio-frequency oxygen-plasma-assisted molecular beam epitaxy. The films retain their single crystalline wurtzite structure without any other crystallographic phase from precipitates, based on reflection high energy electron diffraction, X-ray diffraction, transmission electron microscopy, and Raman scattering. The results of X-ray diffraction, optical transmission spectroscopy, and in-situ X-ray photoelectron spectroscopy confirm the incorporation of Co2+ cations into the wurtzite lattice. The films exhibit robust ferromagnetism and the magneto-optical Kerr effect at room temperature. The saturation magnetization reaches 265 emu/cm3 at x = 0.45, which corresponds to the average magnetic moment of 1.5 μB per Co atom.
History
Citation
Cao, Q., Zhu, D., Fu, M., Cai, L., Yang, P., Li, S., Zhu, Y., Ma, X., Liu, G., Chen, Y., Yan, S., Mei, L. & Wang, X. (2016). Robust ferromagnetism of single crystalline CoxZn1−xO (0.3 ≤ x ≤ 0.45) epitaxial films with high Co concentration. Applied Physics Letters, 109 (5), 052404-1-052404-5.