Reversible and Nonvolatile Manipulation of the Spin-Orbit Interaction in Ferroelectric Field-Effect Transistors Based on a Two-Dimensional Bismuth Oxychalcogenide

The spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOIs through electrostatic gates have been investigated; however, the relatively weak and volatile tunability limits their practical applications in spintronics. Here, we demonstrate the nonvolatile electric field control of the SOI via constructing ferroelectric Rashba architectures, i.e., two-dimensional Bi2O2Se/Pb(Mg1/3Nb2/3)O3-PbTiO3 ferroelectric field-effect transistors. The experimentally observed weak antilocalization (WAL) cusp in Bi2O2Se films implies the Rashba-type SOI that arises from the asymmetric confinement potential. Significantly, taking advantage of the switchable ferroelectric polarization, the WAL-to-weak-localization-transition trend reveals the competition between spin relaxation and the dephasing process, and the variation of carrier density leads to a reversible and nonvolatile modulation of the spin-relaxation time and the spin-splitting energy of Bi2O2Se films by this ferroelectric gating. Our work provides a scheme to achieve nonvolatile control of the Rashba SOI with the utilization of ferroelectric remanent polarization.