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Rayleigh-Instability-Induced Bismuth Nanorod@Nitrogen-Doped Carbon Nanotubes as A Long Cycling and High Rate Anode for Sodium-Ion Batteries

journal contribution
posted on 2024-11-16, 04:02 authored by Pan Xue, Nana WangNana Wang, Zhiwei Fang, Zhenxiao Lu, Xun XuXun Xu, Liang Wang, Yi Du, Xiaochun Ren, Zhongchao BaiZhongchao Bai, Shi DouShi Dou, Guihua Yu
Sodium-ion battery (SIB) as one of the most promising large-scale energy storage devices has drawn great attention in recent years. However, the development of SIBs is limited by the lacking of proper anodes with long cycling lifespans and large reversible capacities. Here we present rational synthesis of Rayleigh-instability-induced bismuth nanorods encapsulated in N-doped carbon nanotubes (Bi@N-C) using Bi 2 S 3 nanobelts as the template for high-performance SIB. The Bi@N-C electrode delivers superior sodium storage performance in half cells, including a high specific capacity (410 mA h g -1 at 50 mA g -1 ), long cycling lifespan (1000 cycles), and superior rate capability (368 mA h g -1 at 2 A g -1 ). When coupled with homemade Na 3 V 2 (PO 4 ) 3 /C in full cells, this electrode also exhibits excellent performances with high power density of 1190 W kg -1 and energy density of 119 Wh kg -1total . The exceptional performance of Bi@N-C is ascribed to the unique nanorod@nanotube structure, which can accommodate volume expansion of Bi during cycling and stabilize the solid electrolyte interphase layer and improve the electronic conductivity.

Funding

Multifunctional 2D materials for sustainable energy applications

Australian Research Council

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Development of the next generation battery storage system for smart grid

Australian Research Council

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History

Citation

Xue, P., Wang, N., Fang, Z., Lu, Z., Xu, X., Wang, L., Du, Y., Ren, X., Bai, Z., Dou, S. & Yu, G. (2019). Rayleigh-Instability-Induced Bismuth Nanorod@Nitrogen-Doped Carbon Nanotubes as A Long Cycling and High Rate Anode for Sodium-Ion Batteries. Nano Letters: a journal dedicated to nanoscience and nanotechnology, 19 (3), 1998-2004.

Journal title

Nano Letters

Volume

19

Issue

3

Pagination

1998-2004

Language

English

RIS ID

133750

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