Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ('on', with conducting edge states) to a conventional insulator ('off'), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na3Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed.