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Nonlocal transistor based on pure crossed Andreev reflection in a EuO-graphene/superconductor hybrid structure

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posted on 2024-11-16, 08:50 authored by Yee Ang, Lawrence Ang, Chao ZhangChao Zhang, Zhongshui Ma
We study the interband transport in a superconducting device composed of graphene with EuO-induced exchange interaction. We show that pure crossed Andreev reflection can be generated exclusively without the parasitic local Andreev reflection and elastic cotunnelling over a wide range of bias and Fermi levels in an EuO-graphene/superconductor/EuO-graphene device. The pure nonlocal conductance exhibits rapid on-off switching and oscillatory behavior when the Fermi levels in the normal and the superconducting leads are varied. The oscillation reflects the quasiparticle propagation in the superconducting lead and can be used as a tool to probe the subgap quasiparticle mode in superconducting graphene, which is inaccessible from the current-voltage characteristics. Our results suggest that the device can be used as a highly tunable transistor that operates purely in the nonlocal and spin-polarized transport regime.

Funding

Novel terahertz electronics, photonics and plasmonics in high-mobility, low-dimensional electronic systems (HMLDES)

Australian Research Council

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History

Citation

Ang, Y., Ang, L. K., Zhang, C. & Ma, Z. (2016). Nonlocal transistor based on pure crossed Andreev reflection in a EuO-graphene/superconductor hybrid structure. Physical Review B: Condensed Matter and Materials Physics, 93 (4), 041422-1-041422-5.

Journal title

Physical Review B

Volume

93

Issue

4

Language

English

RIS ID

105576

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