Neutron dosimetry with planar silicon p-i-n diodes

Rozenfeld, Anatoly; Yudelev, M; Lerch, Michael; Cornelius, Iwan; Griffin, P; Perevertailo, V L; Anokhin, I E; Zinets, O S; Khivrich, V I; Pinkovskaya, M; Alexiev, D; Reinhard, M

Neutron dosimetry with planar silicon p-i-n diodes

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posted on 2024-11-15, 10:16 authored by Anatoly RozenfeldAnatoly Rozenfeld, M Yudelev, Michael LerchMichael Lerch, Iwan CorneliusIwan Cornelius, P Griffin, V L Perevertailo, I E Anokhin, O S Zinets, V I Khivrich, M Pinkovskaya, D Alexiev, M Reinhard

New nonionizing energy losses (NIEL) sensors based on silicon planar p-i-n diodes of different geometry have been investigated and their response to fast neutron field compared with bulk diodes. The possibility of obtaining a wide range of sensitivities in these NIEL sensors simultaneously with measurements of IEL has been demonstrated.

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Citation

This article was originally published as: Rosenfeld, AB, Yudelev, M, Lerch, MLF et al, Neutron dosimetry with planar silicon p-i-n diodes, IEEE Transactions on Nuclear Science, December 2003, 50(6)1, 2367-2372. Copyright IEEE 2003.

Journal title

IEEE Transactions on Nuclear Science

Volume

50

Issue

6 I

Pagination

2367-2372

Publisher website/DOI

https://doi.org/10.1109/TNS.2003.821390

Language

English

RIS ID

9042

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Neutron dosimetry with planar silicon p-i-n diodes

History

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