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In situ hydrostatic pressure induced improvement of critical current density and suppression of magnetic relaxation in Y(Dy-0.5)Ba2Cu3O7-(delta) coated conductors

journal contribution
posted on 2024-11-16, 05:20 authored by Lina Sang, Joffre Gutierrez Royo, Chuanbing Cai, Shi DouShi Dou, Xiaolin WangXiaolin Wang
We report on the effect of in situ hydrostatic pressure on the enhancement of the in-magneticfield critical current density parallel to the crystallographic c-axis and vortex pinning in epitaxial Y(Dy0.5)Ba2Cu3O7−δ coated conductors prepared by metal organic deposition. Our results show that in situ hydrostatic pressure greatly enhances the critical current density at high fields and high temperatures. At 80 K and 5 T we observe a ten-fold increase in the critical current density under the pressure of 1.2 GPa, and the irreversibility line is shifted to higher fields without changing the critical temperature. The normalized magnetic relaxation rate shows that vortex creep rates are strongly suppressed due to applied pressure, and the pinning energy is significantly increased based on the collective creep theory. After releasing the pressure, we recover the original superconducting properties. Therefore, we speculate that the in situ hydrostatic pressure exerted on the coated conductor enhances the pinning of existing extended defects. This is totally different from what has been observed in REBa2Cu3O7−δ melt-textured crystals, where the effect of pressure generates point-like defects.

Funding

Electron and spin transport in topological insulators

Australian Research Council

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Electronic topological materials

Australian Research Council

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History

Citation

Sang, L., Gutierrez , J., Cai, C., Dou, S. & Wang, X. (2018). In situ hydrostatic pressure induced improvement of critical current density and suppression of magnetic relaxation in Y(Dy-0.5)Ba2Cu3O7-(delta) coated conductors. Superconductor Science & Technology, 31 (7), 075003-1-075003-7.

Journal title

Superconductor Science and Technology

Volume

31

Issue

7

Language

English

RIS ID

128181

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