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Graphene doping to enhance the flux pinning and supercurrent carrying ability of a magnesium diboride superconductor

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posted on 2024-11-16, 08:26 authored by Xun XuXun Xu, Shi DouShi Dou, Xiaolin WangXiaolin Wang, Jung Ho KimJung Ho Kim, John A Stride, Mohammad Choucair, WeiKong Yeoh, R K Zheng, S P Ringer
The effect of graphene doping on the electromagnetic properties of MgB2 has been examined, in comparison with the case for undoped MgB2. It was found that graphene doping is more efficient than other forms of carbon doping for effecting improvement in the critical current density–field performance (Jc(B)), with little change in the transition temperature of MgB2. An optimal enhancement of Jc(B) was achieved for 3.7 at.% graphene doped MgB2, by a factor of 30 at 5 K and 10 T, as compared to undoped MgB2. It is found that spatial fluctuation in Tc is responsible for the flux pinning mechanism of graphene doped MgB2.

Funding

Current limiting mechanisms in magnesium diboride superconductors

Australian Research Council

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History

Citation

Xu, X., Dou, S. Xue., Wang, P., Kim, J., Stride, J. A., Choucair, M., Yeoh, W., Zheng, R. K. & Ringer, S. P. (2010). Graphene doping to enhance the flux pinning and supercurrent carrying ability of a magnesium diboride superconductor. Superconductor Science & Technology, 23 (8), 1-5.

Journal title

Superconductor Science and Technology

Volume

23

Issue

8

Pagination

1-5

Language

English

RIS ID

33088

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