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Ferroelectric properties of Bi3.25Sm0.75V0.02T2.98O12 thin film at elevated temperature

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posted on 2024-11-15, 14:38 authored by Zhenxiang ChengZhenxiang Cheng, Xiaolin WangXiaolin Wang, Shi DouShi Dou, Kiyoshi Ozawa, Hideo Kimura
The ferroelectric behavior in terms of electrical polarization and fatigue and dielectric properties at elevated temperature of the ferroelectric Bi3.25Sm0.75V0.02T2.98O12 thin film fabricated by the pulsed laser deposition method were studied. Its switchable polarization increased at elevated temperature, and the coercive field decreased at the same time due to the strong domain depinning process at higher temperature. This film shows almost a polarization-fatigue-free character at room temperature, but the aggregation and diffusion of the thermally activated long-range oxygen vacancies caused strong domain pinning, and thus a poor fatigue resistance was observed at elevated temperature.

History

Citation

Cheng, Z, Wang, X, Dou, SX, Ozawa, K & Kimura, H (2007), Ferroelectric properties of Bi3.25Sm0.75V0.02T2.98O12 thin film at elevated temperature, Applied Physics Letters, 90(22), pp. 222902-1-222902-3.

Journal title

Applied Physics Letters

Volume

90

Issue

22

Language

English

RIS ID

19999

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