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Coupling Topological Insulator SnSb2Te4 Nanodots with Highly Doped Graphene for High-Rate Energy Storage

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posted on 2024-11-16, 02:00 authored by Zhibin Wu, Gemeng Liang, Wei Kong PangWei Kong Pang, Tengfei Zhou, Zhenxiang ChengZhenxiang Cheng, Wenchao Zhang, Ye Liu, Bernt JohannessenBernt Johannessen, Zaiping GuoZaiping Guo
Topological insulators have spurred worldwide interest, but their advantageous properties have scarcely been explored in terms of electrochemical energy storage, and their high-rate capability and long-term cycling stability still remain a significant challenge to harvest. p-Type topological insulator SnSb2Te4 nanodots anchoring on few-layered graphene (SnSb2Te4/G) are synthesized as a stable anode for high-rate lithium-ion batteries and potassium-ion batteries through a ball-milling method. These SnSb2Te4/G composite electrodes show ultralong cycle lifespan (478 mAh g−1 at 1 A g−1 after 1000 cycles) and excellent rate capability (remaining 373 mAh g−1 even at 10 A g−1) in Li-ion storage owing to the rapid ion transport accelerated by the PN heterojunction, virtual electron highways provided by the conductive topological surface state, and extraordinary pseudocapacitive contribution, whose excellent phase reversibility is confirmed by synchrotron in situ X-ray powder diffraction. Surprisingly, durable lifespan even at practical levels of mass loading (>10 mg cm−2) for Li-ion storage and excellent K-ion storage performance are also observed. This work provides new insights for designing high-rate electrode materials by boosting conductive topological surfaces, atomic doping, and the interface interaction.

Funding

Interphases and interfaces of nanomaterials in potassium-ion batteries

Australian Research Council

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Potassium ion batteries for large scale renewable energy storage

Australian Research Council

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High-voltage electrode materials for lithium-ion batteries

Australian Research Council

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Exploration of Advanced Nanostructures for Sodium-ion Battery Application

Australian Research Council

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History

Citation

Wu, Z., Liang, G., Pang, W., Zhou, T., Cheng, Z., Zhang, W., Liu, Y., Johannessen, B. & Guo, Z. (2019). Coupling Topological Insulator SnSb2Te4 Nanodots with Highly Doped Graphene for High-Rate Energy Storage. Advanced Materials, Online First 1905632-1-1905632-10.

Journal title

Advanced Materials

Volume

32

Issue

2

Language

English

RIS ID

140475

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