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Anomalous Hall effect in Nd-doped Bi1.1Sb0.9STe2 topological insulator single crystals

journal contribution
posted on 2024-11-17, 13:05 authored by Lei Chen, Weiyao Zhao, Kaijian Xing, Mengyun You, Xiaolin Wang, Ren Kui Zheng
Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantum anomalous Hall effect, which has been observed in magnetic-topological-insulator-based devices. In this work, we report successful doping of rare-earth element Nd into Bi1.1Sb0.9STe2 bulk-insulating topological insulator single crystals, in which the Nd moments are ferromagnetically ordered at ∼100 K. Benefiting from the in-bulk-gap Fermi level, electronic transport behaviors dominated by the topological surface states are observed in the ferromagnetic region. At low temperatures, strong Shubnikov-de Haas oscillations with a nontrivial Berry phase are observed. The topological insulator with long range magnetic ordering in Nd-doped Bi1.1Sb0.9STe2 single crystals provides a good platform for quantum transport studies and spintronic applications.

Funding

Australian Institute of Nuclear Science and Engineering (11974155)

History

Journal title

Physical Chemistry Chemical Physics

Volume

26

Issue

3

Pagination

2638-2645

Language

English

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