A superconducting transistorlike device having good input-output isolation

A multiterminal superconducting device with the S1IS2FIS3 structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material) is fabricated and characterized. Introducing a thin ferromagnetic layer into the middle electrode dramatically reduces parasitic back action of the acceptor junction (S1IS2) bias current on the injector junction (S2FIS3)current-voltage characteristic as compared with that for the formerly reported quiteron, a device exploiting similar operation principle.