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A nonconjugated bridge in dimer-sensitized solar cells retards charge recombination without decreasing charge injection efficiency

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posted on 2024-11-16, 08:53 authored by Kenji Sunahara, Matthew Griffith, Takayuki Uchiyama, Pawel WagnerPawel Wagner, David OfficerDavid Officer, Gordon WallaceGordon Wallace, Attila MozerAttila Mozer, Shogo Mori
Dye sensitized solar cells (DSSCs) employing a dimer porphyrin, which was synthesised with two porphyrin units connected without conjugation, have shown that both porphyrin components can contribute to photocurrent generation, that is, more than 50 % internal quantum efficiency. In addition, the open-circuit voltage (Voc) of the DSSCs was higher than that of DSSCs using monomer porphyrins. In this paper, we first optimized cell structure and fabrication conditions. We obtained more than 80% incident photon to current conversion efficiency from the dimer porphyrin sensitized DSSCs and higher Voc and energy conversion efficiency than monomer porphyrin sensitized solar cells. To examine the origin of the higher Voc, we measured electron lifetime in the DSSCs with various conditions, and found that the dimer system increased the electron lifetime by improving the steric blocking effect of the dye layer, whilst the lack of a conjugated linker prevents an increase in the attractive force between conjugated sensitizers and the acceptor species in the electrolyte. The results support a hypothesis; dispersion force is one of the factors influencing the electron lifetime in DSSCs.

Funding

Next generation excitonic solar cells using advanced charge generation concepts: setting the new efficiency benchmark

Australian Research Council

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Citation

Sunahara, K., Griffith, M. J., Uchiyama, T., Wagner, P., Officer, D. L., Wallace, G. G., Mozer, A. J. & Mori, S. (2013). A nonconjugated bridge in dimer-sensitized solar cells retards charge recombination without decreasing charge injection efficiency. ACS Applied Materials and Interfaces, 5 (21), 10824-10829.

Journal title

ACS Applied Materials and Interfaces

Volume

5

Issue

21

Pagination

10824-10829

Language

English

RIS ID

85116

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