A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors

In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable mean to Improve the radiation hardness of silicon detectors up to fluences of 1016n/cm2. In this work the simulated electrical characteristics of Irradiated p-type and n-type detectors are reported, for comparison with experimental measurements collected from the literature. The behaviour of the silicon devices at a fluence of 1016n/cm2 shows better results In term of charge collection efficiency using a p-type silicon detector.