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Terahertz Emission from (100) p-InA

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conference contribution
posted on 2024-11-13, 21:07 authored by M L Smith, R Mendis, Rodney VickersRodney Vickers, Roger LewisRoger Lewis
Terahertz emission from (100) p-type InAs illuminated by ultrafast near-infrared pulses is investigated. A two-fold rotational symmetry was observed when rotated about the surface normal. A quadratic relationship was found for the emission dependence on optical pump power. These suggest the presence of photo-carrier transport and optical rectification mechanisms. The InAs emission was found to exceed that of a blackbody radiator for frequencies below 1 THz for nominal input power levels. The generated power was found to be roughly two orders of magnitude greater than a 1mm ZnTe emitter.

History

Citation

This paper was originally published as: Smith, ML, Mendis, R, Vickers, REM and Lewis, RA, Terahertz Emission from (100) p-InA, Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, (IRMMW-THz 2005), 19-23 September 2005, 1, 253-254. Copyright IEEE 2005.

Parent title

The Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005

Volume

1

Pagination

253-254

Language

English

RIS ID

25198

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    Keywords

    terahertz emissionphoto-carrier transportoptical rectification mechanisms

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