Far-infrared spectroscopy of P ion-implanted Si

The spectroscopy of impurity atoms in elemental Si has a long history and has received a fillip in recent years with the development of the Kane quantum computer. In this study we report on one method of incorporating P (and P dimers) into the semiconductor host lattice, namely iron-implantation, and one method of analysing for the impurity, namely far-infrared magnetospectroscopy.