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Far-infrared Laser Magnetospectroscopy of Donors and Acceptors in Ge

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conference contribution
posted on 2024-11-13, 16:59 authored by Carey FreethCarey Freeth, Roger LewisRoger Lewis
The energy levels of the donor impurity phosphorous and the acceptor impurity gallium in the elemental semiconductor host germanium have been investigated by measuring the absorption of radiation from a far-infrared laser as magnetic field intensity is varied.

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Citation

Freeth, CA & Lewis, RA, Far-infrared Laser Magnetospectroscopy of Donors and Acceptors in Ge, In Cashion, J, Finlayson, T, Paganin, D, Smith, A & Troup, G (Eds), Condensed Matter and Materials Meeting Australia: Australian and New Zealand Institutes of Physics, 2003.

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English

RIS ID

9672

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    donorsgefarlaserinfraredacceptorsmagnetospectroscopy

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