The energy levels of the donor impurity phosphorous and the acceptor impurity gallium in the elemental semiconductor host germanium have been investigated by measuring the absorption of radiation from a far-infrared laser as magnetic field intensity is varied.<p></p>
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ISBN - Is identical to 9780959806458 (urn:isbn:9780959806458)
Citation
Freeth, CA & Lewis, RA, Far-infrared Laser Magnetospectroscopy of Donors and Acceptors in Ge, In Cashion, J, Finlayson, T, Paganin, D, Smith, A & Troup, G (Eds), Condensed Matter and Materials Meeting Australia: Australian and New Zealand Institutes of Physics, 2003.