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Dielectric properties of Bi doped Sb2Te3 thin films studied by terahertz time-domain spectroscopy

conference contribution
posted on 2024-11-16, 07:48 authored by Qinjun Chen, Dongqi ShiDongqi Shi, Xiaolin WangXiaolin Wang, Roger LewisRoger Lewis, Chao ZhangChao Zhang
We have fabricated Sb2Te3 thin films, with different thicknesses by controlling the deposition times, using pulsed laser deposition. We studied the dielectric properties using terahertz time domain spectroscopy (TDS). The real and imaginary parts of the complex refractive index of Sb2Te3 thin films were presented.

Funding

Terahertz optoelectronics based on spintronics materials

Australian Research Council

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Advanced materials and structures for terahertz science and technology

Australian Research Council

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Enhancing Australia's Terahertz Infrastructure

Australian Research Council

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History

Citation

Chen, Q., Shi, D., Wang, X., Lewis, R. A. & Zhang, C. (2013). Dielectric properties of Bi doped Sb2Te3 thin films studied by terahertz time-domain spectroscopy. 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) (pp. 1-2). Germany: The Institute of Electrical and Electronics Engineers Inc.

Parent title

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

Publisher website/DOI

Language

English

RIS ID

87963

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    Keywords

    studiedfilmsthinsb2te3dopedbispectroscopydomainpropertiestimedielectricterahertz

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