Lead-free potassium bismuth titanate thin film with complex Aurivillius layer structure

Authors

Zhenxiang Cheng, University of WollongongFollow
Xiaolin Wang, University of WollongongFollow
Hongyang Zhao, National Institute Materials Science, Japan
Hideo Kimura, National Institute For Materials Science

RIS ID

32363

Publication Details

Cheng, Z, Wang, P, Zhao, H, & Kimura, H (2010), Lead-free potassium bismuth titanate thin film with complex Aurivillius layer structure, Journal of Applied Physics, 107(8), pp. 084105-1-084105-4.

Abstract

A ferroelectric thin film of Aurivillius phase K_0.5Bi_4.5Ti₄O₁₅ (KBT) with a complex bismuth layer-structure was fabricated using the pulsed laser deposition method. The thin film grown on Pt/Ti/SiO₂/ Si substrate shows a strong c-axis orientation, as revealed by x-ray diffraction results, and platelike growth of grains. A Pt/KBT/Pt capacitor shows a maximum polarization of about 20 µC/cm². In addition, the capacitor also shows good fatigue resistance, with a decrease of 14.5% in the remanent polarization after 10⁷ switching cycles. This Aurivillius phase with four layers of TiO₆ octahedra in its unit cell has a band gap of 3.6 eV, which is greater than that of Bi₄Ti₃O₁₂.