A superconducting transistorlike device having good input-output isolation

Authors

Ivan Nevirkovets, University of WollongongFollow

RIS ID

31382

Publication Details

Nevirkovets, I (2009), A superconducting transistorlike device having good input-output isolation, Applied Physics Letters, 95(5), pp. 052505-1-052505-3.

Abstract

A multiterminal superconducting device with the S₁IS₂FIS₃ structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material) is fabricated and characterized. Introducing a thin ferromagnetic layer into the middle electrode dramatically reduces parasitic back action of the acceptor junction (S₁IS₂) bias current on the injector junction (S₂FIS₃)current-voltage characteristic as compared with that for the formerly reported quiteron, a device exploiting similar operation principle.