A simple MOD method to grow a single buffer layer of Ce0.8Gd0.2O1.9 (CGO) for coated conductors



Publication Details

Liu, M, Shi, D, Suo, H, Ye, S, Zhao, Y, Zhu, Y, Li, Q, Wang, L, Jihyun, A & Zhou, M (2009), A simple MOD method to grow a single buffer layer of Ce0.8Gd0.2O1.9 (CGO) for coated conductors, Physica C: Superconductivity and its Applications, 469(5-6), pp. 230-233.


A single Ce0.8Gd0.2O1.9(CGO) buffer layer was successfully grown on the home-made textured Ni–5 at.%W (Ni–5W) substrates for YBCO coated conductors by a simple metal–organic deposition (MOD) technique. The precursor solution was prepared using a newly developed process and only contained common metal–organic salts of both Ce and Gd dissolved into a propionic acid solvent. The precursor solution at 0.4 M concentration was spin coated on short samples of Ni–5W substrates and heat-treated at 1100°C in a mixture gas of 5% H2in Ar for an hour. X-ray studies indicated that the CGO films had good out-of-plane and in-plane textures with full-width-half-maximum values of 4.18° and 6.19°, respectively. Atomic force microscope (AFM) investigations of the CGO films revealed that most of the grain boundary grooves on the Ni–5W surface were found to be well covered by CGO layers, which had a fairly dense and smooth microstructure without cracks and porosity. These results indicate that our MOD technique is very promising for further development of single buffer layer architecture for YBCO coated conductors, due to its low cost and simple process.

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