Title

Moire-Potential-Induced Band Structure Engineering in Graphene and Silicene

RIS ID

139193

Publication Details

Zhao, M., Zhuang, J., Cheng, Q., Hao, W. & Du, Y. (2019). Moire-Potential-Induced Band Structure Engineering in Graphene and Silicene. Small, Online First 1903769 -1-1903769 -11.

Abstract

A moiré pattern results from the projection of one periodic pattern to another with relative lattice constant or misalignment and provides great periodic potential to modify the electronic properties of pristine materials. In this Review, recent research on the effect of the moiré superlattice on the electronic structures of graphene and silicene, both of which possess a honeycomb lattice, is focused on. The moiré periodic potential is introduced by the interlayer interaction to realize abundant phenomena, including new generation of Dirac cones, emergence of Van Hove singularities (vHs) at the cross point of two sets of Dirac cones, Mott-like insulating behavior at half-filling state, unconventional superconductivity, and electronic Kagome lattice and flat band with nontrivial edge state. The role of interlayer coupling strength, which is determined by twist angle and buckling degree, in these exotic properties is discussed in terms of both the theoretical prediction and experimental measurement, and finally, the challenges and outlook for this field are discussed.

Grant Number

ARC/DP170101467, ARC/FT180100585

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