Title

Flexible, Temperature-Resistant, and Fatigue-Free Ferroelectric Memory Based on Bi(Fe0.93Mn0.05Ti0.02)O3 Thin Film

RIS ID

134940

Publication Details

Yang, C., Han, Y., Qian, J., Lv, P., Lin, X., Huang, S. & Cheng, Z. (2019). Flexible, Temperature-Resistant, and Fatigue-Free Ferroelectric Memory Based on Bi(Fe0.93Mn0.05Ti0.02)O3 Thin Film. Acs Applied Materials & Interfaces, 11 (13), 12647-12655.

Abstract

A recent hot-spot topic forflexible and wearable devices involves high-performance nonvolatile ferroelectric memories operating under compressive or tensilemechanical deformations. This work presents the direct fabrication of aflexible(Mn,Ti)-codoped multiferroic BiFeO3film capacitor with Pt bottom and Au topelectrodes on mica substrate. The fabricated polycrystalline Bi(Fe0.93Mn0.05Ti0.02)O3film on mica exhibits superior ferroelectric switching behavior with robust saturatedpolarization (Ps∼93μC/cm2) and remanent polarization (Pr∼66μC/cm2) andexcellent frequency stability (1−50 kHz) and temperature resistance (25−200°C), aswell as reliable long-lifetime operation. More saliently, it can be safely bent to a smallradius of curvature, as low as 2 mm, or go through repeated compressive/tensilemechanicalflexing for 103bending times at 4 mm radius without any obviousdeterioration in polarization, retention time at 105s, or fatigue resistance after 109switching cycles. Thesefindings demonstrate a novel route to designingflexible BiFeO3-based ferroelectric memories forinformation storage and data processing, with promising applications in next-generation smart electronics

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Link to publisher version (DOI)

http://dx.doi.org/10.1021/acsami.9b01464