Publication Details

Xiang, F., Srinivasan, A., Du, Z. Z., Klochan, O., Dou, S., Hamilton, A. R. & Wang, X. (2018). Thickness-dependent electronic structure in WTe2 thin films. Physical Review B: Covering condensed matter and materials physics, 98 (3), 035115-1-035115-10.


We study the electronic structure of WTe2 thin films with different thicknesses. High-quality thin-film samples are obtained with carrier mobility up to 5000 cm2 V−1 s−1, which enables us to resolve the four main Fermi pockets from Shubnikov-de Haas (SdH) oscillations. Angle-resolved SdH oscillations show that the WTe2 thin films cross from three-dimensional to two-dimensional electronic systems at a thickness of ∼ 20 nm. Using the field effect, the nature of the Fermi pockets in thin-film WTe2 is identified, and the evolution of SdH oscillation frequencies is traced over different sample thicknesses. It is found that the frequencies dramatically decrease at a thickness of approximately 12 nm, which indicates the onset of finite-size effects on the band structure. Our work pins down two critical length scales of the thickness-dependent electronic structure in WTe2 thin films.

Grant Number

ARC/DP130102956, ARC/FT130100778