New types of high field pinning centers and pinning centers for the peak effect
In this article, we report the results of a study that shows the existence of pinning centers inside grains and between grains in NbTi wires. We accurately show the ranges of magnetic fields in which the individual pinning centers operate. The pinning centers inside grains are activated in high magnetic fields above 6 T. We show the range of magnetic fields in which individual defects, dislocations, precipitates inside grains and substitutions in the crystal lattice can operate. We show the existence of a new kind of high field pinning center, which operates in high magnetic fields from 8 to ~9.5 T. We indicate that dislocations create pinning centers in the range of magnetic fields from 6 to 8 T. In addition, our measurements suggest that the peak effect (increased critical current density (J c) near the upper critical field (B c2)) could be attributed to martensitic (needle-shaped) α'-Ti inclusions inside grains. These centers are very important because they work very effectively in magnetic fields above 9.5-10 T. We also show that the α-Ti precipitates (between grains) with a thickness similar to the coherence length create pinning centers which work very effectively in magnetic fields from 3 to 6 T. In magnetic fields below 3 T, they act very efficiently in grain boundaries. The measurements indicate that the pinning centers created by dislocations only can be tested by transport measurements. This indicates that dislocations do not increase the magnetic critical current density (J cm). Cold drawing improves pinning centers at grain boundaries and increases the dislocation density, and cold-drawing pinning centers are responsible for the peak effect.