Molecular-beam epitaxy and robust superconductivity of stoichiometric FeSe crystalline films on bilayer graphene

Authors

Canli Song, Tsinghua University, Chinese Academy of Sciences
Yi-Lin Wang, Chinese Academy Of Sciences
Yeping Jiang, Tsinghua University, Chinese Academy of Sciences
Zhi Li, Chinese Academy of SciencesFollow
Lili Wang, Chinese Academy of Sciences
Ke He, Chinese Academy of Sciences
Xi Chen, Tsinghua University
Xu-Cun Ma, Chinese Academy of Sciences
Qi-Kun Xue, Tsinghua University, Chinese Academy of SciencesFollow

RIS ID

115299

Publication Details

Song, C., Wang, Y., Jiang, Y., Li, Z., Wang, L., He, K., Chen, X., Ma, X. & Xue, Q. (2011). Molecular-beam epitaxy and robust superconductivity of stoichiometric FeSe crystalline films on bilayer graphene. Physical Review B: Condensed Matter and Materials Physics, 84 020503-1-020503-4.

Abstract

We report on molecular beam epitaxy growth of stoichiometric and superconducting FeSe crystalline thin films on double-layer graphene. Layer-by-layer growth of high-quality films has been achieved in a well-controlled manner by using Se-rich condition, which allow us to investigate the thickness-dependent superconductivity of FeSe. In situ low-temperature scanning tunneling spectra reveal that the local superconducting gap in the quasiparticle density of states is visible down to two triple layers for the minimum measurement temperature of 2.2 K, and that the transition temperature Tc scales inversely with film thickness.