Recent developments on high Curie temperature PIN-PMN-PT ferroelectric crystals

RIS ID

107541

Publication Details

Zhang, S., Li, F., Sherlock, N. P., Luo, J., Lee, H. Jae., Xia, R., Meyer, R. J., Hackenberger, W. & Shrout, T. R. (2011). Recent developments on high Curie temperature PIN-PMN-PT ferroelectric crystals. Journal of Crystal Growth, 318 846-850.

Abstract

Pb(In0.5Nb0.5)O3Pb(Mg1/3Nb 2/3)O3PbTiO3 (PINPMNPT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (>30 °C) and coercive fields (∼5 kV/cm), meanwhile maintaining similar electromechanical couplings (k33>90%) and piezoelectric coefficients (d33∼1500 pC/N), when compared to their binary counterpart Pb(Mg1/3Nb2/3)O 3PbTiO3. In this article, we reviewed recent developments on the PINPMNPT single crystals, including the Bridgman crystal growth, dielectric, electromechanical, piezoelectric and ferroelectric behaviors as functions of temperature and dc bias. Mechanical quality factor Q was studied as a function of orientation and phase. Of particular interest is the dynamic strain, which related to the Q and d33, was found to be improved when compared to the binary system, exhibiting the potential usage of PINPMNPT in high power application. Furthermore, PINPMNPT crystals exhibit improved thickness dependent properties, due to their small domain size, being on the order of 1 μm. Finally, the manganese acceptor dopant in the ternary crystals was investigated and discussed briefly in this paper. 2010 Elsevier B.V. All rights reserved.

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Link to publisher version (DOI)

http://dx.doi.org/10.1016/j.jcrysgro.2010.11.043