RIS ID
106054
Abstract
Single domain relaxor-PT crystals are important from both fundamental and application viewpoints. Compared to domain engineered relaxor-PT crystals, however, single domain crystals are prone to cracking during poling. In this paper, based on the analysis of the cracking phenomenon in [001] poled tetragonal 0.25Pb(In0.5Nb0.5)O3-0.37Pb(Mg 1/3Nb2/3)O3-0.38PbTiO3 (PIN-PMN-PT) crystals, the non-180°ferroelastic domain switching was thought to be the dominant factor for cracking during the poling process. A high temperature poling technique, by which the domain switching can be greatly avoided, was proposed to achieve the single domain relaxor-PT crystals. By this poling approach, a quasi-single domain crystal was obtained without cracks. In addition, compared to room temperature poling, the high temperature poled PIN-PMN-PT crystals showed improved electromechanical properties, i.e., a low dielectric loss, a low strain-electric field hysteresis and a high mechanical quality factor, demonstrating a beneficial poling approach. This journal is the Partner Organisations 2014.
Publication Details
Li, F., Wang, L., Jin, L., Xu, Z. & Zhang, S. (2014). Achieving single domain relaxor-PT crystals by high temperature poling. CrystEngComm, 16 (14), 2892-2897.