RIS ID
32842
Abstract
We investigate the generation of THz radiation by the application of ultra-short near-infrared optical pulses to bulk unbiased InP. The THz radiation is detected in the direction of the specular reflection. While the overall emission characteristics are similar to those displayed by InAs under similar excitation conditions, in contrast to InAs, a single-cycle only variation in THz signal, of about ±20%, is observed as the sample is rotated through 360° around the surface normal.
Publication Details
Hargreaves, S. & Lewis, R. A. (2010). Terahertz emission from InP. In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors, 27/07-1/08, 08, Rio de Janeiro, Brazil. AIP Conference Proceedings, 1199, 477-478.