Dielectric properties of Bi doped Sb2Te3 thin films studied by terahertz time-domain spectroscopy

Authors

Qinjun Chen, University of WollongongFollow
Dongqi Shi, University of WollongongFollow
Xiaolin Wang, University of WollongongFollow
Roger A. Lewis, University of WollongongFollow
Chao Zhang, University of WollongongFollow

RIS ID

87963

Publication Details

Chen, Q., Shi, D., Wang, X., Lewis, R. A. & Zhang, C. (2013). Dielectric properties of Bi doped Sb2Te3 thin films studied by terahertz time-domain spectroscopy. 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) (pp. 1-2). Germany: The Institute of Electrical and Electronics Engineers Inc.

Abstract

We have fabricated Sb2Te3 thin films, with different thicknesses by controlling the deposition times, using pulsed laser deposition. We studied the dielectric properties using terahertz time domain spectroscopy (TDS). The real and imaginary parts of the complex refractive index of Sb2Te3 thin films were presented.

Grant Number

ARC/LX0668576, ARC/LX0776043, ARC/LE0668322

Additional Grant Number

http://purl.org/au-research/grants/ARC/LX0668576, http://purl.org/au-research/grants/ARC/LX0776043, http://purl.org/au-research/grants/ARC/LE0668322