Dielectric properties of Bi doped Sb2Te3 thin films studied by terahertz time-domain spectroscopy
We have fabricated Sb2Te3 thin films, with different thicknesses by controlling the deposition times, using pulsed laser deposition. We studied the dielectric properties using terahertz time domain spectroscopy (TDS). The real and imaginary parts of the complex refractive index of Sb2Te3 thin films were presented.
ARC/LX0668576, ARC/LX0776043, ARC/LE0668322