Enhancing charge transport in copper phthalocyanine thin film by elevating pressure of deposition chamber
RIS ID
108718
Abstract
Copper phthalocyanine (CuPc)-based thin film transistors were fabricated using CuPc films grown under different deposition pressure (Pdep) (ranging from 1.8 x 10-4 Pa to 1.0 x 10-1 Pa). The transistor performance highly depended on Pdep. A field-effect mobility of 2.1 x 10-2 cm2/(V s) was achieved under 1.0 x 10-1 Pa. Detailed investigations revealed that P dep modulates the molecular packing and orientation of the organic films grown on a SiO2/Si substrate and influences the charge transport. Furthermore, from a device physics point of view, contact resistance of the fabricated transistors decreased when Pdep increased, which was beneficial in reducing energy consumption.
Publication Details
Liu, Q., Li, Y., Wang, X., Huang, W., Ma, J., Li, Y., Shi, Y., Wang, X. & Hu, Z. (2014). Enhancing charge transport in copper phthalocyanine thin film by elevating pressure of deposition chamber. Organic Electronics, 15 (8), 1799-1804.