Annealing of silver implanted 6H-SiC and the diffusion of the silver



Publication Details

Hlatshwayo, T. T., Malherbe, J. B., van der Berg, N. G., Prinsloo, L. C., Botha, A. J., Wendler, E. & Wesch, W. (2012). Annealing of silver implanted 6H-SiC and the diffusion of the silver. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 274 120-125.


Annealing and diffusion behavior of implanted silver in 6H-SiC has been investigated using Rutherford backscattering spectroscopy (RBS), channeling, Raman spectroscopy and scanning electron microscopy (SEM) techniques. Silver ( 109Ag +) ions with an energy of 360 keV were implanted in SiC to a fluence of 2 x 10 16 cm -2 at room temperature (23 °C), 350 and 600 °C. After implantation the samples were annealed at temperatures up to 1400 °C. The results revealed that implantation at room temperature created an amorphous layer of about 270 nm from the surface while implantation at 350 and 600 °C retained a crystalline structure with more damage created for 350 °C implantation compared to 600 °C. Diffusion of implanted Ag accompanied by loss from the surface started at 1300 °C in the amorphous SiC with no diffusion observed in the crystalline SiC. A new model explaining this diffusion of silver accompanied silver loss is presented.

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