RIS ID
22942
Abstract
Multiwall carbon nanotubes have been grown by catalytic chemical vapour deposition using iron catalyst particles drop cast onto etched silicon wafers. The catalyst used was poly(styrene-vinylferrocene) in toluene solution which has an iron content of 2.1%. The etched silicon wafers have trench regions of varying widths ranging from 0.32 to 1 μm. For trench widths below 0.5 μm the number of “interconnecting” tubes growing from one side of the trench to the other increases sharply. A significant proportion of these “interconnects” are found to be Y-junction and multiple junction MWNTs. A systematic study of the effects of each of the growth conditions (temperature, run time, gas flow, catalyst concentration and trench width) versus interconnect yield was carried out. Densities of ~ 1.6 interconnects per micron of trench are obtained, with junction structures accounting for 38% of these interconnects. Densities can be controlled through modification of chemical vapour deposition conditions.
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Publication Details
Leahy, RW, Lahiff, E, Minett, AI & Blau, WJ, Chemical vapour deposition grown carbon nanotubes for interconnect technology, 2007, 1-7. Copyright AZoM.com Pty Ltd. Original item available here