The operational characteristics of power electronics operating at ambient temperatures are well known. Less well known are the characteristics of these devices when operating at cryogenic temperatures. This emerging field is known as cryoelectronics. The primary driver for operation at reduced temperatures is the promise of a resultant reduction in device operation losses. The operating characteristics of Metal Oxide Silicon Field Effect Transistors (MOSFETs) and Insulated Gate Bipolar Transistors (IGBTs) at Liquid Nitrogen (LN) temperature have been experimentally analysed. The results have been used to evaluate the viability of using cryoelectronics in medium - high power applications, considering trade-offs between device costs, cryocooler power requirements and device power ratings.