Terahertz band-gap in InAs/GaSb type-II superlattices

Authors

L. L. Li, Chinese Academy of Sciences
Wen Xu, Chinese Academy of Sciences
Z. Zeng, Chinese Academy of Sciences
A. R. Wright, University of Wollongong
Chao Zhang, University of WollongongFollow
J. Zhang, Yunnan University, Kunming, China
Y. L. Shi, Kunming Institute of Physics, Kunming, China
T. C. Lu, Sichuan University, Chengdu, China

RIS ID

29360

Publication Details

Li, L., Xu, W., Zeng, Z., Wright, A. R., Zhang, C., Zhang, J., Shi, Y. & Lu, T. (2009). Terahertz band-gap in InAs/GaSb type-II superlattices. Microelectronics Journal, 40 (4-5), 812-814.

Abstract

We demonstrate theoretically that it is possible to realize terahertz (THz) fundamental band-gap in InAs/GaSb type-II superlattices (SLs). The presence of such band-gap can result in a strong cut-off of optical absorption at THz bandwidth. This study is pertinent to the application of InAs/GaSb type-II SLs as THz photodetectors.