Title

Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems

RIS ID

29358

Publication Details

Xu, W., Zeng, Z., Wright, A., Zhang, C., Zhang, J. & Lu, T. (2009). Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems. Microelectronics Journal, 40 (4-5), 809-811.

Abstract

We demonstrate theoretically that the many-body effect such as exchange interaction can cause the hybridization of the electron and hole dispersion relations in InAs/GaSb based type II and broken-gap quantum well (QW) systems. As a result, a terahertz mini-gap at the anti-crossing points of the conduction and valence bands can be induced by the inter-layer electron–hole coupling via the Coulomb interaction. It is shown that the many-body effect is another important source of the hybridization of the dispersion relations in InAs/GaSb QW systems.

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Link to publisher version (DOI)

http://dx.doi.org/10.1016/j.mejo.2008.11.054