Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems

Authors

Wen Xu, Yunnan University, China
Z. Zeng, Chinese Academy of Sciences
A. R. Wright, University of Wollongong
Chao Zhang, University of WollongongFollow
J. Zhang, Yunnan University,China
T C Lu, Sichuan University, Chengdu, China

RIS ID

29358

Publication Details

Xu, W., Zeng, Z., Wright, A., Zhang, C., Zhang, J. & Lu, T. (2009). Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems. Microelectronics Journal, 40 (4-5), 809-811.

Abstract

We demonstrate theoretically that the many-body effect such as exchange interaction can cause the hybridization of the electron and hole dispersion relations in InAs/GaSb based type II and broken-gap quantum well (QW) systems. As a result, a terahertz mini-gap at the anti-crossing points of the conduction and valence bands can be induced by the inter-layer electron–hole coupling via the Coulomb interaction. It is shown that the many-body effect is another important source of the hybridization of the dispersion relations in InAs/GaSb QW systems.