Title

Electron tunneling in single layer graphene with an energy gap

RIS ID

37736

Publication Details

Xu, X., Zhang, C., Xu, G. Cao, J. (2011). Electron tunneling in single layer graphene with an energy gap. Chinese Physics B, 20 (2), 1-6.

Abstract

When a single layer graphene is epitaxially grown on silicon carbide, it will exhibit a finite energy gap like a conventional semiconductor, and its energy dispersion is no longer linear in momentum in the low energy regime. In this paper, we have investigated the tunneling characteristics through a two-dimensional barrier in a single layer graphene with an energy gap. It is found that when the electron is at a zero angle of incidence, the transmission probability as a function of incidence energy has a gap. Away from the gap the transmission coefficient oscillates with incidence energy which is analogous to that of a conventional semiconductor. The conductance under zero temperature has a gap. The properties of electron transmission may be useful for developing graphene-based nano-electronics.

Please refer to publisher version or contact your library.

Share

COinS
 

Link to publisher version (DOI)

http://dx.doi.org/10.1088/1674-1056/20/2/027201