Boron doping effects on the electronic structure of normal and superconductor carbon nanotubes
Effects of boron doping on the electronic structures of normal and superconductor single walled carbon nanotubes (SWCNTs) are investigated. For the normal case we found that by increasing boron concentration the semiconducting energy gap, Eg, decreases. For the superconductor case the critical temperature is decreased by increasing the boron doping concentration.
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