Boron doping effects on the electronic structure of normal and superconductor carbon nanotubes

Authors

Ali Fathalian, University of Wollongong
S X. Dou, University of WollongongFollow
Rostam Moradian, Razi University Iran

RIS ID

31889

Publication Details

Dou, S. Xue., Fathalian, A. and Moradian, R. (2010). Boron doping effects on the electronic structure of normal and superconductor carbon nanotubes. Physica B: Condensed Matter, 405 (4), 1125-1129.

Abstract

Effects of boron doping on the electronic structures of normal and superconductor single walled carbon nanotubes (SWCNTs) are investigated. For the normal case we found that by increasing boron concentration the semiconducting energy gap, E_g, decreases. For the superconductor case the critical temperature is decreased by increasing the boron doping concentration.

Grant Number

ARC/DP0770205

Additional Grant Number

http://purl.org/au-research/grants/ARC/DP0770205