Title

Atomic simulation of effect of stacking fault and dislocation on fracture behaviour in Fe crystal

RIS ID

27197

Publication Details

Lu, C., Gao, Y., Zhu, H. and Tieu, A. K. (2008). Atomic simulation of effect of stacking fault and dislocation on fracture behaviour in Fe crystal. Key Engineering Materials, 385-387 457-460.

Abstract

The defects in crystalline materials significantly affect the fracture behaviors. In this paper molecular dynamics (MD) model using a potential of embedded atom method (EAM) has been developed to investigate the effect of the major crystalline defects, stacking fault and edge dislocation, on the crack propagation in Fe crystal. Six cases with different locations of stacking fault and edge dislocation have been studied. The strain distribution in lattice aggregate was heterogeneous. The dislocations were observed slipping along directions [100] and [-100] on the plane (100). Simulation results showed that the location of the stacking fault and edge dislocation significantly influenced the crack propagation speed.

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