Title

Fast response detection of H2S by CuO-doped SnO2 films prepared by electrodeposition and oxidization at low temperature

RIS ID

39855

Publication Details

Wang, S., Xiao, Y., Shi, D., Liu, H. Kun. and Dou, S. Xue. (2011). Fast response detection of H2S by CuO-doped SnO2 films prepared by electrodeposition and oxidization at low temperature. Materials Chemistry and Physics, 130 (3), 1325-1328.

Abstract

Fast response detection of H2S by CuO-doped SnO2 films prepared was prepared by a simple two-step process: electrodeposition from aqueous solutions of SnCl2 and CuCl2, and oxidization at 600 °C. The phase constitution and morphology of the CuO-doped SnO2 films were characterized by X-ray diffraction and scanning electron microscopy. In all cases, a polycrystalline porous film of SnO2 was the product, with the CuO deposited on the individual SnO2 particles. Two types of CuO-doped SnO2 films with different microstructures were obtained via control of oxidation time: nanosized CuO dotted island doped SnO2 and ultra-uniform, porous, and thin CuO film coated SnO2. The sensor response of the CuO doped SnO2 films to H2S gas at 50–300 ppm was investigated within the temperature range of 25–125 °C. Both of the CuO-doped SnO2 films show fast response and recovery properties. The response time of the ultra-uniform, porous, and thin CuO coated SnO2 to H2S gas at 50 ppm was 34 s at 100 °C, and its corresponding recovery time was about 1/3 of the response time.

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Link to publisher version (DOI)

http://dx.doi.org/10.1016/j.matchemphys.2011.09.023