Title

Preparation and properties of YSZ-doped YBCO films grown by the TFA-MOD method

RIS ID

24913

Publication Details

Liu, M., Suo, H., Ye, S., Shi, D., Tang, X., Ma, L., Li, Q., Wang, L., Zhou, M., Dou, S. X. & Zhao, Y. (2008). Preparation and properties of YSZ-doped YBCO films grown by the TFA-MOD method. Superconductor Science and Technology, 21 115012-115016.

Abstract

YBa2Cu3O7-delta (YBCO) films with Zr doping have been prepared successfully by the trifluoroacetate metal-organic deposition (TFA-MOD) method through dissolving Zr acety lacetonate in the precursor solution. Yttria-stabilized zirconia (YSZ) nanoparticles were detected in the doped YBCO films by x-ray diffraction (XRD) and scanning electron microscopy (SEM). From the analysis of XRD omega and Phi scans, the doped films have better out-of-plane and in-plane textures than those of the un-doped YBCO film. Although the doped YBCO films have a lower critical transition temperature (T-c) than that of un-doped YBCO film, a very significant enhancement of critical current density (J(c)) is displayed as compared to the un-doped film at high applied fields. A high J(c) near 10(6) A cm(-2) at 1 T and a J(c) of 10(5) A cm(-2) at 5 T were observed in 6% doped Zr film, which are 5 times and 25 times the J(c) values of the un-doped film in the same applied fields, respectively, indicating an optimal defect density created by 6% Zr doping.

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Link to publisher version (DOI)

http://dx.doi.org/10.1088/0953-2048/21/11/115012