Title

Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems

RIS ID

22645

Publication Details

Wei, X. F., Xu, W., Zhang, J., Zeng, Z. & Zhang, C. (2008). Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems. Physica E: Low-Dimensional Systems and Nanostructures, 40 1069-1071.

Abstract

We examine theoretically the contribution from different transition channels to optical absorption in an InAs/GaSb-based type II andbroken-gap quantum well in which both electron and hole subbands in different layers are occupied by carriers. We find that in such asystem, due to a weak overlap of the electron and hole wavefunction at the interface, optical absorption is mainly achieved via intersubbandtransition within the same material layer. As a result, two sharp absorption peaks can be observed and the intensity of thistwo-colour absorption depends rather weakly on temperature up to room-temperature.

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Link to publisher version (DOI)

http://dx.doi.org/10.1016/j.physe.2007.08.004