Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems
We examine theoretically the contribution from different transition channels to optical absorption in an InAs/GaSb-based type II andbroken-gap quantum well in which both electron and hole subbands in different layers are occupied by carriers. We find that in such asystem, due to a weak overlap of the electron and hole wavefunction at the interface, optical absorption is mainly achieved via intersubbandtransition within the same material layer. As a result, two sharp absorption peaks can be observed and the intensity of thistwo-colour absorption depends rather weakly on temperature up to room-temperature.
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