Title

Electronic structure and thermoelectric properties of Bi2Te3 crystals and graphene-doped Bi2Te3

RIS ID

33969

Publication Details

Li, A., Shahbazi-Manshadi, M., Zhou, S., Wang, G., Zhang, C., Jood, P., Peleckis, G., Du, Y., Cheng, Z., Wang, P. Kuo, Y. (2010). Electronic structure and thermoelectric properties of Bi2Te3 crystals and graphene-doped Bi2Te3. Thin Solid Films, 518 (24, supplement 1), e57-e60.

Abstract

The electronic structure and thermoelectric properties of Bi2Te3 single crystals and graphene-doped Bi2Te3 polycrystalline samples were investigated with the aid of first-principles calculations, X-ray diffraction, scanning electron microscopy, Rietveld refinement, and thermal and transport measurements. It was found that the p electrons from the Bi and Te atoms are responsible for the density of states near the Fermi level. Experimental results show that the graphene-doped Bi2Te3 exhibits lower thermal conductivity and has a higher figure-of-merit than the single crystals.

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Link to publisher version (DOI)

http://dx.doi.org/10.1016/j.tsf.2010.03.124