Effect of thermal strain on J(c) and T-c in high density nano-SiC doped MgB2

Authors

Wenxian Li, University of WollongongFollow
Rong Zeng, University of WollongongFollow
Lin Lu, University of WollongongFollow
S. X. Dou, University of WollongongFollow

RIS ID

37708

Publication Details

Li, W., Zeng, R., Lu, L. Dou, S. Xue. (2011). Effect of thermal strain on J(c) and T-c in high density nano-SiC doped MgB2. Journal of Applied Physics, 109 (7), 1-3.

Abstract

The influences of lattice strain on the superconducting critical current density J_c and critical transition temperature T_c in pure MgB₂ and a SiC-MgB₂ composite made by the diffusion process are explored, based on the thermal expansion coefficients and the low temperature effects on Raman scattering. The strong thermal strain provides a strong flux pinning force for the supercurrents at the interfaces between SiC and MgB₂. The high T_c of SiC-MgB₂ is also discussed according to the expanded lattice and Raman characteristics.

Grant Number

ARC/DP0770205

Additional Grant Number

http://purl.org/au-research/grants/ARC/DP0770205